2n5551 mmbt5551 npn general purpose amplifier this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. symbol parameter value units v ceo collector-emitter voltage 160 v v cbo collector-base voltage 180 v v ebo emitter-base voltage 6.0 v i c collector current - continuous 600 ma t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics ta = 25c unless otherwise noted symbol characteristic max units 2n5551 *mmbt5551 p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw / c r jc thermal resistance, junction to case 83.3 c/w r j a thermal resistance, junction to ambient 200 357 c/w c b e to-92 c b e sot-23 mark: 3s * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." ? 2001 fairchild semiconductor international 2n5551 / mmbt5551 2n5551/mmbt5551, rev a
3 2n5551 / mmbt5551 electrical characteristics ta = 25c unless otherwise noted off characteristics on characteristics symbol parameter test conditions min max units small signal characteristics v ( br ) ceo collector-emitter sustaining voltage* i c = 1.0 ma, i b = 0 160 v v ( br ) cbo collector-base breakdown voltage i c = 100 a, i e = 0 180 v v ( br ) ebo emitter-base breakdown voltage i e = 10 a, i c = 0 6.0 v i cbo collector cutoff current v cb = 120 v, i e = 0, v cb = 120 v, i e = 0, t a = 100 c 50 50 na a i ebo emitter cutoff current v eb = 4.0 v, i c = 0 50 na h fe dc current gain i c = 1.0 ma, v ce = 5.0 v i c = 10 ma, v ce = 5.0 v i c = 50 ma, v ce = 5.0 v 80 80 30 250 v ce( sat ) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 0.15 0.20 v v v be( sat ) base-emitter saturation voltage i c = 10 ma, i b = 1.0 ma i c = 50 ma, i b = 5.0 ma 1.0 1.0 v v f t current gain - bandwidth product i c = 10 ma, v ce = 10 v, f = 100 mhz 100 300 mhz c obo output capacitance v cb = 10 v, i e = 0, f = 1.0 mhz 6.0 pf c ibo input capacitance v be = 0.5 v, i c = 0, f = 1.0 mhz 20 pf h fe small-signal current gain i c = 1.0 ma, v ce = 10 v, f = 1.0 khz 50 250 nf noise figure i c = 250 a, v ce = 5.0 v, r s =1.0 k ? , f=10 hz to 15.7 khz 8.0 db * pulse test: pulse width 300 s, duty cycle 2.0% spice model npn (is=2.511f xti=3 eg=1.11 vaf=100 bf=242.6 ne=1.249 ise=2.511f ikf=.3458 xtb=1.5 br=3.197 nc=2 isc=0 ikr=0 rc=1 cjc=4.883p mjc=.3047 vjc=.75 fc=.5 cje=18.79p mje=.3416 vje=.75 tr=1.202n tf=560p itf=50m vtf=5 xtf=8 rb=10) npn general purpose amplifier (continued)
typical characteristics collector-emitter breakdown voltage with resistance between emitter-base 0.1 1 10 100 1000 160 180 200 220 240 260 resistance (k ) bv - breakdown voltage (v) ? cer i = 1.0 ma c collector-cutoff current vs. ambie nt temperature 25 50 75 100 125 1 10 50 t - ambie nt temp erature ( c) i - colle ctor current (na) a cbo v = 10 0v cb typi cal pulse d current ga in vs collec tor current 0 .1 0 .2 0 .5 1 2 5 10 20 50 1 00 0 50 100 150 200 250 i - collector current (ma) h - typical pulsed current gain c fe 125 c 25 c - 40 c v = 5v ce collector-emitt er saturation voltage vs collect or curre nt 110100200 0 0. 1 0. 2 0. 3 0. 4 0. 5 i - collector current (ma) v - collector emitter voltage (v) c cesat 25 c - 40 c 125 c = 10 base-emitter saturation voltage vs collect or curre nt 110100200 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter voltage (v) c besat = 10 25 c - 40 c 125 c bas e e mitter o n voltage vs collector current 0. 1 1 1 0 10 0 20 0 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter on voltage (v) c beon v = 5v ce 25 c - 40 c 125 c 2n5551 / mmbt5551 npn general purpose amplifier (continued)
3 2n5551 / mmbt5551 npn general purpose amplifier (continued) typical characteristics (continued) power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 temperature ( c) p - power dissipation (mw) d o to-92 sot-23 input and output capacitance vs reverse voltage 0.1 1 10 100 0 5 10 15 20 25 30 v - collector voltage (v) capacitance (pf) c f = 1.0 mhz ce c cb ib small signal current gain vs collector current 11050 0 4 8 12 16 i - collector current (ma) h - small signal current gain c fe freg = 20 mhz v = 10v ce
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